The government has teamed up with the world’s leading semiconductor manufacturers on a project to develop a next-generation memory chip, an effort to help the country maintain its lead in the industry, government officials said Thursday.

The project calls for the government to work with Samsung Electronics and Hynix Semiconductor in conducting research and development to make the world’s first spin transfer torque-magnetic random access memory (STT-MRAM) devices, the Ministry of Knowledge Economy said

Samsung and Hynix, which effectively control the world’s memory chip market, are vying with Japanese companies to become the first to manufacture a STT-MRAM chip.

“Once the STT-MRAM is developed, South Korea may be able to control roughly 45 percent of the 30-nano type memory chip market by 2015,” said Park Tae-sung, head of the ministry’s semiconductor and display division.

The market for the advanced memory device with faster processing time is projected to top US$53 billion worldwide in the target year.

Park said that the joint R&D effort will also give the country an opportunity to gain insight into basic technologies that can further buoy the country’s world-class competitiveness in the semiconductor industry.

The government plans to bear half of the entire cost of 24 billion won ($20.8 million) until 2014, with the two South Korean firms to foot the rest of the bill.

Researchers involved in the joint project are to use a state-of-the-art laboratory at Hangyang University’s fusion technology center that has been set up for it.

The joint R&D center is already equipped with a fully operational 300mm magnetic thin film deposition system and other chip-making facilities. The facility, superior to the 200mm deposition system used by rival Japanese companies to make their STT-MRAMs, is expected to give the country a critical lead in the development race, the officials said.

YonhapNewsAgency

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